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S. Dimitrijev, Principles of Semiconductor Devices, Oxford University Press, New York, 2006 (ISBN: 0-19-516113-0) S. Dimitrijev, Undertsanding Semiconductor Devices, Oxford ...
K.Y. Cheong, S. Dimitrijev, and J.Han, "Investigation of Ultralow Leakage in MOS Capacitors on 4H SiC", IEEE Transactions on Electron Devices, vol. 51, pp. 1361-1365, 2004.
REFERENCES [1] K.Y. Cheong, S. Dimitrijev, and J. Han, "Effects of initial nitridation on the characteristics of SiC-SiO 2 interface," Mater. Sci.
2009 : He, L. Z., Malcolm, A. S., Dimitrijev, M., Onaizi, S. A., Shen, H. H., Holt, S. A., Dexter, A. F., Thomas, R. K. and Middelberg, A. P. J. (2009) Cooperative Tuneable ...
xi LIST OF PUBLICATIONS Journal Papers H. Linewih , S. Dimitrijev, C. E. Weitzel, and H. B. Harrison, "SiC ACCUFET for Improved Performance of High Voltage Power Supply", submitted to ...
S. Dimitrijev, Principles of Semiconductor Devices, Oxford University Press, New York, 2006 (ISBN: 0-19-516113-0) S. Dimitrijev, Undertsanding Semiconductor Devices ...
K.Y. Cheong, S. Dimitrijev, and J.Han, "Investigation of Ultralow Leakage in MOS Capacitors on 4H SiC", IEEE Transactions on Electron Devices, vol. 51, pp. 1361-1365, 2004
REFERENCES [1] K.Y. Cheong, S. Dimitrijev, and J. Han, "Effects of initial nitridation on the characteristics of SiC-SiO 2 interface," Mater. Sci.
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